首页> 外国专利> Crystal structure compounds, oxide sintered bodies, sputtering targets, crystalline oxide thin films, amorphous oxide thin films, thin film transistors, and electronic devices

Crystal structure compounds, oxide sintered bodies, sputtering targets, crystalline oxide thin films, amorphous oxide thin films, thin film transistors, and electronic devices

机译:晶体结构化合物,氧化物烧结体,溅射靶,晶体氧化物薄膜,非晶氧化物薄膜,薄膜晶体管和电子设备

摘要

A crystal structure compound represented by the following composition formula (2) and having a diffraction peak in the range of the incident angle (2θ) observed by the X-ray (Cu—Kα ray) diffraction measurement specified in the following (A) to (K). A. (InxGayAlz) 2O3 ... (2) (In equation (2), 0.47 ≦ x ≦ 0.53, 0.17 ≦ y ≦ 0.43, 0.07 ≦ z ≦ 0.33, x + y + z = 1) 31 ° to 34 ° ... (A), 36 ° to 39 ° ... (B), 30 ° to 32 ° ... (C), 51 ° to 53 ° ... ( D), 53 ° to 56 ° ... (E), 62 ° to 66 ° ... (F), 9 ° to 11 ° ... (G), 19 ° to 21 ° ... (H) , 42 ° to 45 ° ... (I), 8 ° to 10 ° ... (J), 17 ° to 19 ° ... (K)
机译:由以下组成式(2)表示的晶体结构化合物,其衍射峰在通过以下(A)至(X)中指定的X射线(Cu-Kα射线)衍射测量观察到的入射角(2θ)范围内。 (K)。 A.(InxGayAlz)2O3 ...(2)(在等式(2)中,0.47≤x≤0.53,0.17≤y≤0.43,0.07≤z≤0.33,x + y + z = 1)31°至34° ...(A),36°至39°...(B),30°至32°...(C),51°至53°...(D),53°至56°.. 。(E),62°至66°...(F),9°至11°...(G),19°至21°...(H),42°至45°...( I),8°至10°...(J),17°至19°...(K)

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号