Physical properties of Cu and Dy co-doped ZnO thin films prepared by radio frequency magnetron sputtering for hybrid organic/inorganic electronic devices

摘要

Copper (Cu) and dysprosium (Dy) co-doped zinc oxide (ZnO) thin films were fabricated by radio frequency magnetron sputtering (RF-magnetron sputtering) using a homemade target having the atomic percentage of Cu and Dy of 1%, onto optical glass substrates and quartz substrates. The structural, morphological, optical, and electrical properties of fabricated ZnO:(Cu, Dy) structures were analyzed and discussed. It was found that all samples have hexagonal Wurtzite structure. Optical transmission measurements indicate values larger than 75% in the 400-2500 nm ranges. The current-voltage characteristics of hybrid heterojunctions based on ZnO:(Cu, Dy) and poly(3-hexylthiophene-2.5-diyl) (P3HT) or copper (II) phthalocyanine (CuPc) thin films were acquired in the dark, in ambient atmosphere, and they exhibit the typical diode behavior, almost free of electrical hysteresis.