CIRCUITS, METHODS AND DESIGN STRUCTURES FOR ADAPTIVE REPAIR OF SRAM ARRAYS

摘要

The circuit includes a static random access memory array having a plurality of cells, in turn having a plurality of devices; as well as a global sensor having at least one output, coupled to the static random access memory array, and configured to sense at least one of global readability and global write-ability. Also included is a decision-making circuit coupled to the at least one output of the global sensor. The decision-making circuit is configured to determine, from the at least one output of the global sensor, whether adaptation signals are required to correct global readability and/or write-ability. An adaptation signal generation block is also included and is coupled to the decision-making circuit and the array, and configured to supply the adaptation signals to the array, responsive to the decision-making circuit determining that the adaptation signals are required. At least the array and the global sensor, and preferably the decision-making circuit and the adaptation signal generation block as well, are implemented on a single integrated circuit chip. An associated method and design structure(s) are also provided.