首页> 外国专利> RESOLUTION ENHANCEMENT TECHNIQUES COMBINING FOUR BEAM INTERFERENCE-ASSISTED LITHOGRAPHY WITH OTHER PHOTOLITHOGRAPHY TECHNIQUES

RESOLUTION ENHANCEMENT TECHNIQUES COMBINING FOUR BEAM INTERFERENCE-ASSISTED LITHOGRAPHY WITH OTHER PHOTOLITHOGRAPHY TECHNIQUES

机译:结合四束干扰光刻技术和其他光照相技术的分辨率增强技术

摘要

Methods and systems are disclosed that provide multiple lithography exposures on a wafer, for example, using interference lithography and optical photolithography. Various embodiments may balance the dosage and exposure rates between the multiple lithography exposures to provide the needed exposure on the wafer. Other embodiments provide for assist features and/or may apply resolution enhancement to various exposures. In a specific embodiment, a wafer is first exposed using optical photolithography and then exposed using interference lithography.
机译:公开了例如使用干涉光刻和光学光刻在晶片上提供多次光刻曝光的方法和系统。各种实施例可以在多次光刻曝光之间平衡剂量和曝光速率,以在晶片上提供所需的曝光。其他实施例提供辅助特征和/或可以将分辨率增强应用于各种曝光。在特定实施例中,首先使用光学光刻法曝光晶片,然后使用干涉光刻法曝光晶片。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号