Application of Moire Techniques in Scanning-Electron-Beam Lithography and Microscopy.

摘要

When a grating is viewed by scanning electron microscopy, a moire pattern is observed. Applications of the moire phenomenon in scanning-electron-beam lithography and microscopy are discussed, including adjustment of the spatial period and angle of a scan raster, analysis of distortion in a scan raster, analysis of stray-field beam deflection and measurement errors, and registration of a scan field relative to coded patterns on a substrate. (Author)