IN-LINE VIRTUAL-MASKING METHOD FOR MASKLESS LITHOGRAPHY

摘要

The present invention relates to an in-line virtual -masking method for maskless lithography, wherein, in a maskless lithography process by using micromirrors, after receiving inputs for pattern exposure, a base of an overlay intensity basis is obtained by integrating instantaneous overlay intensities in a cell of image corresponding to the micromirror with respect to substrate translation, an exposure virtual mask for the pattern is generated by comparing an occupancy of the pattern per unit base of an overlay intensity basis to a reflection definitive occupancy limit based on intensity information, the exposure virtual mask is compressed then transferred to a micromirror controller connection unit and decompressed at the unit, and the micromirrors are controlled based on the binary reflection information from the decompressed exposure virtual mask, whereby enabling accurate in-line exposure on the substrate.