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PULSED SELECTIVE AREA LATERAL EPITAXY FOR GROWTH OF III-NITRIDE MATERIALS OVER NON-POLAR AND SEMI-POLAR SUBSTRATES
PULSED SELECTIVE AREA LATERAL EPITAXY FOR GROWTH OF III-NITRIDE MATERIALS OVER NON-POLAR AND SEMI-POLAR SUBSTRATES
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机译:非极性和半极性基材上III型氮化物生长的脉冲选择区横向表位
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摘要
An epitaxy procedure for growing extremely low defect density non-polar and semi-polar III-nitride layers over a base layer, and the resulting structures, is generally described. In particular, a pulsed selective area lateral overgrowth of a group III nitride layer can be achieved on a non-polar and semi-polar base layer. By utilizing the novel P-MOCVD or PALE and lateral over growth over selected area, very high lateral growth conditions can be achieved at relatively lower growth temperature which does not affect the III-N surfaces.
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