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SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, NONVOLATILE MEMORY DEVICE AND ELECTRONIC DEVICE

机译:半导体集成电路设备,非易失性存储器设备和电子设备

摘要

A semiconductor integrated circuit device, a non-volatile memory device and an electronic device are provided to reduce the cost of a semiconductor integrated circuit substrate as a semiconductor integrated circuit substrate is no need to be manufactured with a high internal pressure process. A non-volatile memory device electrically writes data by a first voltage. In a semiconductor integrated circuit device(20E), a semiconductor integrated circuit substrate(10E) operated by the second voltage lower than the first voltage is mounted on one wiring board. A non-volatile memory device has a first terminal and a second terminal. The non-volatile memory device supplies the first voltage to the first terminal. The second terminal outputs the second voltage in response to the supply of the first voltage. The semiconductor integrated circuit substrate has a third terminal. The third terminal supplies the second voltage to the semiconductor integrated circuit substrate. The second terminal and third terminal are electrically connected.
机译:提供一种半导体集成电路器件,非易失性存储器件和电子器件以降低半导体集成电路衬底的成本,因为不需要利用高内部压力工艺来制造半导体集成电路衬底。非易失性存储装置通过第一电压电写入数据。在半导体集成电路装置(20E)中,以比第一电压低的第二电压进行动作的半导体集成电路基板(10E)被安装在一个配线板上。非易失性存储装置具有第一端子和第二端子。非易失性存储装置将第一电压提供给第一端子。第二端子响应于第一电压的提供而输出第二电压。半导体集成电路基板具有第三端子。第三端子将第二电压提供给半导体集成电路基板。第二端子和第三端子电连接。

著录项

  • 公开/公告号KR20080113319A

    专利类型

  • 公开/公告日2008-12-30

    原文格式PDF

  • 申请/专利权人 MITSUMI ELECTRIC CO. LTD.;

    申请/专利号KR20080109005

  • 发明设计人 HORIUCHI MICHIHIRO;

    申请日2008-11-04

  • 分类号H01L25/065;H01L25/00;H01L27/115;

  • 国家 KR

  • 入库时间 2022-08-21 19:14:24

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