MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

A method of manufacturing the semiconductor integrated circuit device is provided to perform the exact end point detection by using the localized plasma in the end point of the remote - plasma cleaning. The first wafer(1) is introduced within the wafer processing room(52) of the plasma CVD apparatus(101) having first plasma activating system. The plasma CVD processing is performed on the first wafer introduced within the wafer processing room by using the first plasma activating system. The first wafer is ejected from the wafer processing room to outside. The remote - plasma - cleaning is performed on the wafer processing room. The second wafer is introduced in the wafer processing room. The plasma CVD process is performed on the wafer. The end point of the remote - plasma - cleaning is detected by monitoring the electrical property of the localized plasma.