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METHOD FOR REPAIRING PHASE SHIFT ERROR ON PHASE SHIFT MASK

机译:校正相移掩模上相移误差的方法

摘要

A method for correcting a phase shift error of a phase shift mask is provided to reduce a manufacturing cost by reducing a loss due to remanufacture of a phase shift mask. A phase shift pattern(200) is formed on a transparent substrate(100). An aerial image caused by a phase shift pattern is obtained by irradiating an exposure light source on a phase shift mask. A phase shift error and a position coordinate corresponding to the phase shift error are extracted by analyzing the aerial image. A laser light(400) is irradiated on an opposite surface of a front surface of a substrate having the phase shift pattern. A focus point of the laser light corresponds to a surface of an exposed substrate of a first error region. A surface(101) of the substrate is positioned in a distance closer than a chrome shading layer pattern(300) and the phase shift pattern from a light source of the laser light. The surface of the substrate is locally etched by the laser light. A local recess groove is formed on the surface of the substrate.
机译:提供一种用于校正相移掩模的相移误差的方法,以通过减少由于相移掩模的再制造引起的损耗来降低制造成本。在透明基板(100)上形成相移图案(200)。通过在相移掩模上照射曝光光源来获得由相移图案引起的航空图像。通过分析航空图像来提取相移误差和与该相移误差相对应的位置坐标。激光(400)照射在具有相移图案的基板的前表面的相对表面上。激光的焦点对应于第一误差区域的暴露基板的表面。基板的表面(101)位于距铬遮光层图案(300)和距激光光源的相移图案更近的距离。基板的表面被激光局部蚀刻。在基板的表面上形成局部凹槽。

著录项

  • 公开/公告号KR20090039075A

    专利类型

  • 公开/公告日2009-04-22

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20070104491

  • 发明设计人 KIM MUN SIK;

    申请日2007-10-17

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 19:13:35

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