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METHOD FOR OPERATING A MEMORY DEVICE, REDUCING A LATERAL MIGRATION OF AN ELECTRIC CHARGE, IMPROVING DATA RETENTION CHARACTERISTIC
METHOD FOR OPERATING A MEMORY DEVICE, REDUCING A LATERAL MIGRATION OF AN ELECTRIC CHARGE, IMPROVING DATA RETENTION CHARACTERISTIC
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机译:用于操作存储器,减少电荷的横向迁移,改善数据保持特性的方法
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摘要
PURPOSE: A method for operating a memory device is provided to implement a negative valid effect test voltage below 0 V while applying the voltage of 0V or more to a control gate of the memory cell.;CONSTITUTION: A pre-program voltage is applied to a memory cell of an erase state(S110). The memory cell is pre-programmed to have a smaller threshold voltage distribution in comparison with the erase state. Whether the memory cell is pre-programmed is verified using the negative valid verification voltage(S130).;COPYRIGHT KIPO 2010
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