MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE CAPABLE OF IMPROVING A REPAIR SUCCESS RATE

摘要

PURPOSE: A manufacturing method of a semiconductor device is provided to prevent damage to a pad surface by using a sacrificing film formed in a pad region in a primary repair/pad etching as an etching stop film.;CONSTITUTION: A fuse(38) is formed on a top part of a fuse region of a substrate(21) including a pad region. A first insulation film(23) is formed on a result surface including the fuse. A pad pattern(33B) in which a pad and a sacrificing film(32) are laminated is formed on the first insulation film of the pad region. A second insulation film(27) is formed on a result surface including the pad pattern. A fuse open part(35A) is formed by selectively etching the first insulation film and the second insulation film through a primary repair/pad etching, and exposes a top surface of the fuse.;COPYRIGHT KIPO 2010