SUBSTRATE FOR A SEMICONDUCTOR DEVICE, A SEMICONDUCTOR DEVICE HAVING THE SUBSTRATE AND A METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE CAPABLE OF IMPROVING THE ELECTRICAL CHARACTERISTIC OF THE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A substrate for a semiconductor device, a semiconductor device having the substrate and a method for manufacturing the semiconductor device are provided to form the uniform thickness of a dielectric layer by using an anode oxidation method for forming an insulating layer.;CONSTITUTION: A first metal line part(140) is electrically connected to a first electrode of a semiconductor device. A second metal line part(150) is electrically connected to a second electrode of the semiconductor device. A metal support part is arranged between the first metal line part and the second metal line part. A first insulation part(120) electrically insulates the first metal line part and the metal support part. A second insulation part(130) electrically insulates the second metal line part and the metal support part.;COPYRIGHT KIPO 2013