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It is low, low being damage recovery manner of the dielectricity which makes the damage recover which it occurs low in

机译:低,低电导率的损伤恢复方式,使发生的损伤恢复低

摘要

PROBLEM TO BE SOLVED: To provide a method for recovering damage to a low dielectric insulating film capable of recovering electrical characteristics of the low dielectric insulating film itself sufficiently while suppressing the oxidation of a buried metal and the occurrence of pattern faults.;SOLUTION: A damaged functional group generated on the surface of the low dielectric insulating film by treatment is substituted with a hydrophobic functional group (ST.2). A damaged component present under a dense layer generated on the surface of the low dielectric insulating film by substitution treatment is recovered by using ultraviolet heating treatment (ST.3).;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:提供一种恢复对低介电绝缘膜的损伤的方法,该方法能够充分地恢复低介电绝缘膜本身的电特性,同时抑制埋入金属的氧化和图案缺陷的发生。通过处理在低介电绝缘膜的表面上产生的受损官能团被疏水性官能团取代(ST.2)。使用紫外线加热处理(ST.3),回收通过取代处理在低介电绝缘膜表面上产生的致密层下存在的受损成分。(版权):( C)2009,JPO&INPIT

著录项

  • 公开/公告号JP4555320B2

    专利类型

  • 公开/公告日2010-09-29

    原文格式PDF

  • 申请/专利权人 東京エレクトロン株式会社;

    申请/专利号JP20070158510

  • 发明设计人 浅子 竜一;大澤 佑介;

    申请日2007-06-15

  • 分类号H01L21/768;H01L23/522;

  • 国家 JP

  • 入库时间 2022-08-21 18:58:47

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