Rapid Recovery Process of Plasma Damaged Porous Low-K Dielectrics by Wet Surface Modifying Treatment

摘要

A rapid repair process of plasma damaged SiCOH in combination with post-etch residue removal has been developed. The carbon depletion layer caused by plasma dry etching was repaired by subsequent surface modifying SAM treatment, which resulted in replenishment of carbon not only on the surface but also a few nm toward the bulk. This repairing technique provides a high-quality hydrophobic surface under conditions of low temperature and short process time. In addition, the SAM layer can be expected to act as an adhesion promotor with metal materials.