The SCCO{sub}2 effect for ultra low-k dielectrics film modification - the SCCO{sub}2 process effect for the recovery of etch/ash damage

摘要

The Lower Dielectric Constant is seriously required because of the RC delay impact on the device signal speed and for the lowering power consumption. However, the lower density film for lower dielectric constant induce the various process integration problems. For instance, post Etch/Ash process damage/increasing dielectric constant of the film to be the one of the biggest issue. In this paper, we describe the effect of dielectric constant recovery by the SCCO2 with HMDS on the porous ultra low-k dielectric film.