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STRESS MEMORIZATION DIELECTRIC OPTIMIZED FOR NMOS AND PMOS
STRESS MEMORIZATION DIELECTRIC OPTIMIZED FOR NMOS AND PMOS
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机译:NMOS和PMOS的应力记忆介电优化
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摘要
A method for forming a tensile SiN stress layer for stress memorization enhancement of NMOS transistors with a high Si—H/N—H bond ratio that does not degrade PMOS transistors.
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