CVD FILM FORMING METHOD AND CVD FILM FORMING APPARATUS

摘要

A wafer W is arranged on a susceptor 22 in a chamber 21, and a metal film is formed on a surface of the wafer W by continuously supplying the chamber 21 with a metal compound gas from a metal compound gas supply unit 51 and a reducing organic compound gas from a reducing organic compound gas supply unit 52 of a gas supply mechanism 50.