HEAT CATALYST-CONTAINING CATHODE TYPE PECVD APPARATUS, PHOTOELECTRIC TRANSDUCER MANUFACTURED BY USING THE SAME AS WELL AS ITS MANUFACTURING METHOD, HEAT CATALYST- CONTAINING CATHODE TYPE PECVD METHOD, CVD APPARATUS USING THE SAME, FILM FORMED BY THE SAME METHOD AND DEVICE FORMED BY USING THE SAME FILM

摘要

PROBLEM TO BE SOLVED: To provide a heat catalyst-containing cathode type PECVD apparatus capable of inexpensively forming an Si thin film at a high speed in a high quality, and to provide a photoelectric transducer manufactured by using the same and a method for manufacturing the same.;SOLUTION: The heat catalyst-containing cathode type PECVD apparatus injects a hydrogen gas and an Si gas from a shower electrode having a plurality of gas jet holes connected to a high-frequency power source, and forms the film on the substrate to be formed with the film. In the apparatus, the introducing route of the hydrogen gas is separated from the introducing route of the Si gas until the route of the hydrogen gas passes the shower electrode, and the heat catalyst connected to a DC power source is arranged on the introducing route of the hydrogen gas of the upstream side from the shower electrode. A distance between the shower electrode and the substrate to be formed with the film is 3 cm or less. A distance between the adjacent two gas injection holes of the shower electrode is the distance or less between the shower electrode and the substrate to be formed with the film.;COPYRIGHT: (C)2003,JPO