首页> 外国专利> CATALYST CVD APPARATUS, METHOD FOR TREATING CATALYST BODY USED FOR CATALYST CVD APPARATUS, AND METHOD FOR FORMING FILM USING CATALYST CVD APPARATUS

CATALYST CVD APPARATUS, METHOD FOR TREATING CATALYST BODY USED FOR CATALYST CVD APPARATUS, AND METHOD FOR FORMING FILM USING CATALYST CVD APPARATUS

机译:催化剂CVD装置,用于催化剂CVD装置的催化剂主体的处理方法以及使用催化剂CVD装置形成膜的方法

摘要

PROBLEM TO BE SOLVED: To provide an apparatus and a method capable of stably forming an amorphous silicon deposited film in catalyst CVD process, and to provide a method for treating a catalyst body used for catalyst CVD process.;SOLUTION: The catalyst CVD apparatus for producing non-single crystal silicon films containing at least hydrogen and/or halogen comprises a reaction chamber for receiving a substrate, a gas supply means for supplying a source gas containing silicon atoms into the reaction chamber, and a catalyst body arranged so as to be brought into contact with the source gas supplied from the gas supply means. The catalyst CVD apparatus is characterized in that a carbon film is formed on the surface of the catalyst body near a catalyst body-attaching part of the catalyst body.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:提供一种能够在催化剂CVD工艺中稳定地形成非晶硅沉积膜的设备和方法,并提供一种用于催化剂CVD工艺的催化剂体的处理方法。生产至少包含氢和/或卤素的非单晶硅膜的方法包括:反应室,用于容纳基板;气体供应装置,其用于将包含硅原子的原料气体供应到反应室中;以及催化剂体,其布置为与从气体供应装置供应的源气体接触。该催化剂CVD装置的特征在于,在靠近催化剂主体的催化剂主体附接部分的催化剂主体的表面上形成碳膜。COPYRIGHT:(C)2009,JPO&INPIT

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