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Method for increasing reliability of data accessing for a multi-level cell type non-volatile memory

机译:用于提高多层单元型非易失性存储器的数据访问的可靠性的方法

摘要

A method for increasing reliability of data accessing for a multi-level cell type non-volatile memory, wherein a plurality of data storage blocks are taken for data accessing of a computer system in accordance with the structure of storage of the multi-level cell type non-volatile memory; and a page jumper is provided to select at least a set of data storage pages in corresponding to a physical page of same storage cell, by jump connecting of the page jumper which jumps over another data storage page in corresponding to the physical page of the same storage cell, then the data storage page selected is accessed for at least a data storage block. the frequency of erasing of flash memory blocks can thus be reduced to elongate the life of use of the multi-level cell type non-volatile memory, this can assure integrity of the data in accessing during abnormal system power breaking.
机译:一种用于提高多层单元型非易失性存储器的数据访问的可靠性的方法,其中根据多层单元型的存储结构,采用多个数据存储块来进行计算机系统的数据访问。非易失性存储器提供一种页面跳线,用于通过跳越该页面跳线的跳转连接来选择至少一组与该存储单元的物理页面相对应的数据存储页面,该页面跳线跳过与该物理页面的物理页面相对应的另一数据存储页面存储单元,然后访问至少一个数据存储块的所选数据存储页面。因此,可以减少闪存块的擦除频率,以延长多层单元型非易失性存储器的使用寿命,这可以确保在异常系统断电期间访问数据的完整性。

著录项

  • 公开/公告号US2009300272A1

    专利类型

  • 公开/公告日2009-12-03

    原文格式PDF

  • 申请/专利权人 CHANSON LIN;

    申请/专利号US20080230661

  • 发明设计人 CHANSON LIN;

    申请日2008-09-03

  • 分类号G06F12/02;

  • 国家 US

  • 入库时间 2022-08-21 18:50:43

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