首页>
外国专利>
Methods of manufacturing a semiconductor device including CMOS transistor having different PMOS and NMOS gate electrode structures
Methods of manufacturing a semiconductor device including CMOS transistor having different PMOS and NMOS gate electrode structures
展开▼
机译:制造包括具有不同的PMOS和NMOS栅电极结构的CMOS晶体管的半导体器件的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
In a method of manufacturing a semiconductor device, a gate insulation layer is formed on a substrate including a first channel of a first conductive type and a second channel of a second conductive type different from the first conductive type. A first conductive layer including a first metal is formed on the gate insulation layer, and a second conductive layer including a second metal different from the first metal is formed on the first conductive layer formed over the second channel. The second conductive layer is partially removed by a wet etching process to form a second conductive layer pattern over the second channel.
展开▼