首页>
外国专利>
Semiconductor device including field effect transistors laterally enclosed by interlayer dielectric material having increased intrinsic stress
Semiconductor device including field effect transistors laterally enclosed by interlayer dielectric material having increased intrinsic stress
展开▼
机译:半导体器件包括场效应晶体管,该场效应晶体管被具有增加的固有应力的层间介电材料横向包围
展开▼
页面导航
摘要
著录项
相似文献
摘要
By appropriately treating an interlayer dielectric material above P-channel transistors, the compressive stress may be significantly enhanced, which may be accomplished by expanding the interlayer dielectric material, for instance, by providing a certain amount of oxidizable species and performing an oxidation process.
展开▼