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Method of base formation in a BiCMOS process
Method of base formation in a BiCMOS process
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机译:BiCMOS工艺中的基极形成方法
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摘要
Disclosed is a bipolar complementary metal oxide semiconductor (BiCMOS) or NPN/PNP device that has a collector, an intrinsic base above the collector, shallow trench isolation regions adjacent the collector, a raised extrinsic base above the intrinsic base, a T-shaped emitter above the extrinsic base, spacers adjacent the emitter, and a silicide layer that is separated from the emitter by the spacers.
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