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THIN FILM SEMICONDUCTOR ALLOY MATERIAL PREPARED BY A VHF ENERGIZED PLASMA DEPOSITION PROCESS
THIN FILM SEMICONDUCTOR ALLOY MATERIAL PREPARED BY A VHF ENERGIZED PLASMA DEPOSITION PROCESS
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机译:VHF激发等离子体沉积工艺制备的薄膜半导体合金材料
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摘要
A thin film, hydrogenated, silicon based semiconductor alloy material is produced by a VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate. The process is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C, and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. Also disclosed are photovoltaic devices which include the semiconductor material.
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