Enhanced Transmittance and Photoelectrochemical 2D Nanostructured N-Type Semiconductor ZnS Thin Film Prepared by One-Step Electrodeposition in a Non-Vacuum-Processed CIGS Cell

摘要

Two-dimensional N-type semiconductor nanostructured ZnS films for use in optical semiconductor applications were fabricated via a comparatively facile and low-cost electrodeposition method. Electrodeposition was carried out at a current density of 1.5 mA cm(-2) at 60 degrees C. ZnS was produced and deposited on the cathode, and crystalline grains developed. Subsequently, islands of discontinuous N-type semiconductor nanoparticles grew, which decreased the cathode conductivity to control the thickness of the film within the nanometer range. To characterize the structure, composition and chemical state of the nano-film, scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) were employed. The results showed that the ZnS nano-film was successfully prepared, with uniform and dense surface morphology and a wurtzite structure. The 4-min electrodeposition resulted in a ZnS nano-film with thickness of 89.15 nm. The band gap of the ZnS nano-film of the N-type semiconductor was 3.75 eV.