SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF, IMPROVING RELIABILITY OF A SEMICONDUCTOR DEVICE BY IMPROVING CELL CAPACITANCE

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to maintain an electrical characteristic between cells of the semiconductor device uniformly by forming the superposition width of a charge trapping layer and a blocking layer uniformly.;CONSTITUTION: A preliminary tunnel insulation layer, a preliminary charge trapping layer, and a preliminary sacrificial layer are formed on a substrate(100). A charge trapping layer(112) and a sacrificial layer are formed by etching the preliminary charge trapping layer and the preliminary sacrificial layer. A sacrificial layer pattern(118) is formed on the charge trapping layer to expose a part of the charge trapping layer by etching the sacrificial layer partially. A blocking layer(104) is formed on the charge trapping layer and the substrate. At least one first gate(120) extended from the upper side of the substrate to the upper side of the charge trapping layer is formed on the blocking layer. The sacrificial layer and the charge trapping layer are removed partially.;COPYRIGHT KIPO 2010