METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE EQUIPPED WITH A BURIED GATE CAPABLE OF IMPROVING A REFRESH PROPERTY BY REDUCING THE CAPACITANCE OF ENTIRE CELLS

摘要

PURPOSE: A method for manufacturing a semiconductor device equipped with a buried gate is provided to prevent defects due to the stepped part between a cell region and a core/peripheral region by previously forming a gate conductive film in the peripheral region before a bit-line contact is formed in the cell region.;CONSTITUTION: An element isolation film(13) defining a cell region and a peripheral region is formed on the upper side of a substrate(11). A buried gate(18) is formed in the cell region. A sealing film(19) sealing the upper side of the buried gate is formed. A gate oxide film(20) and a gate conductive film(21) are successively formed on the upper side of the cell region and the peripheral region. A photosensitive pattern(22) is formed to open the cell region using a cell region opening mask.;COPYRIGHT KIPO 2011