STACK STRUCTURE COMPRISING EPITAXIAL GRAPHENE, METHOD OF FORMING THE STACK STRUCTURE AND ELECTRONIC DEVICE COMPRISING THE STACK STRUCTURE TO GROW EPITAXIAL GRAPHENE

摘要

PURPOSE: A stack structure comprising epitaxial graphene, method of forming the stack structure and electronic device comprising the stack structure are provided to obtain the dual gate structure having the top gate and bottom gate.;CONSTITUTION: The underlying layer is formed on the Si substrate(SUB1). At least one epitaxial graphene(GP1) is included on the underlying layer. The underlying layer is an h- BN(hexagonal boron nitride)(0001) layer. The Ni(111) layer is formed between the Si substrate and underlying layer. The Cu(111) layer is formed between the Si substrate and Ni(111) layer. The Si substrate is the Si(111) substrate or the Si(110) substrate.;COPYRIGHT KIPO 2010