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Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure
Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure
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机译:包括外延石墨烯的堆叠结构,形成该堆叠结构的方法以及包括该堆叠结构的电子器件
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摘要
Provided are a stack structure including an epitaxial graphene, a method of forming the stack structure, and an electronic device including the stack structure. The stack structure includes: a Si substrate; an under layer formed on the Si substrate; and at least one epitaxial graphene layer formed on the under layer.
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