Out of plane stacking of InSe-based heterostructures towards high performance electronic and optoelectronic devices using a graphene electrode

摘要

Due to their tailored energy band alignments, the integration of two-dimensional materials with out of plane stacking structures provides unprecedented opportunities to fabricate novel electronic and optoelectronic devices. Here, we report the vertical integration of Au-InSe-graphene and graphene-InSe/WSe2-graphene heterostructures to achieve superior properties. The InSe/graphene heterostructure shows a large current density up to 1646 A cm(-2), which makes it a potential candidate for high current flexible devices to enable three dimensional integration. Meanwhile, the graphene-InSe/WSe2-graphene heterostructure exhibits a high rectification ratio of 10(3), a decent responsivity of 83 A W-1, and a superior detectivity of 1.55 x 10(12) Jones, simultaneously. Theoretical calculation indicates that the superior device performance can be attributed to the type II band alignment of InSe and WSe2, which enables efficient separation of photo-generated electron-hole pairs. This study paves the way for the facile fabrication of various functional heterostructures for next-generation electronic and optoelectronic applications.