SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, CAPABLE OF SETTING TI CONCENTRATION OF A BARRIER METAL FILM AS OVER 0.1 AT AND BELOW 14 AT

摘要

PURPOSE: A semiconductor device and a method of manufacturing a semiconductor device are provided to improve the reliability of a copper wire by combining a copper wire and a barrier metal film and reducing the resistance of the copper wiring.;CONSTITUTION: A trench is formed in an insulating layer(2). A barrier metal layer(3) is formed on the side and the bottom of the trench and is formed with the alloy of tantalum and titanium. A copper wire(4) is laminated on the barrier metal film and is located on the trench. The titanium concentration of the barrier metal film is over 0.1 at% and less 14 at%.;COPYRIGHT KIPO 2010