Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Devices Based on DyScO_3 Buffer Layer and Ferroelectric Bi_(3.25)Nd_(0.75)Ti_3O_(12) Thin Film

摘要

DyScO_3 linear dielectric films based metal-insulator-silicon (MIS); Bi_(3.25)Nd_(0.75)Ti_3O_(12) non-linear dielectric films based metal-ferroelectric-metal (MFM); and DyScO_3 insulator as a buffer layer for the metal-ferroelectric-insulator-silicon (MFIS) structures with Bi_(3.25)Nd_(0.75)Ti_3O_(12) ferroelectric films are considered. DyScO_3 films on Si substrates were amorphous and dense with smooth surface morphology, and showed negligible CV hysteresis and low leakage current. Remnant polarization ～ 20μC/cm~2, zero field dielectric constant ～ 400 and loss tangent ～ 0.04 were obtained for the ferroelectric Bi_(3.25)Nd_(0.75)Ti_3O_(12) film on Pt/TiO_2/SiO_2/Si substrates. The MFIS capacitors showed a memory window of 0.7 V, which may be sufficient for the practical applications in nonvolatile RAM.