The Effect of La-Doped Bi_4Ti_3O_(12) Buffer Layer on Crystallinity and Ferroelectric Properties of PbZr_(0.58)Ti_(0.42)O_3/Bi_(3.25)La_(0.75)Ti_3O_(12) Multilayered Thin Films

摘要

PbZr_(0.58)Ti_(0.42)O_3 (PZT) ferroelectric thin films with Bi_(3.25)La_(0.75)Ti_3O_(12) (BLT) buffer layer of various thickness were fabricated on Pt/TiO_2/SiO_2/p-Si( 100) substrates by rf-magnetron sputtering method. The pure PZT film showed (111) preferential orientation in the XRD patterns, and the PZT/BLT films showed (110) preferential orientation with increasing thickness of the BLT layer. There were no obvious diffraction peaks for the BLT buffer layer, for its thin thickness in PZT/BLT multilayered films. There were the maximum number of largest-size grains in PZT/BLT(30 nm)film among all the samples from the surface images of FESEM.