Method of manufacturing barrier metal film of semiconductor device and method of manufacturing metal interconnection film of semiconductor device using the same

摘要

A method of manufacturing a barrier metal film of a semiconductor device includes, after a barrier metal film is annealed, performing an oxygen-annealing in-situ immediately after the annealing. By forming the barrier metal film in this way, an amorphous oxide film is formed only at a predetermined depth from the surface of the barrier metal film, so that a junction spike caused by the diffusion of interconnection material into the barrier metal film can be effectively prevented. This method of manufacturing may also be used when manufacturing an interconnection film of a semiconductor device.