首页> 外国专利> THIN FILM TRANSISTOR SUBSTRATE, PARTICULARLY FOR IMPROVING ETCHING CHARACTERISTICS OF AN INSULATION FILM AND A PROTECTION FILM WHICH ARE DEPOSITED BY A LOWER-TEMPERATURE CHEMICAL VAPOR DEPOSITION METHOD

THIN FILM TRANSISTOR SUBSTRATE, PARTICULARLY FOR IMPROVING ETCHING CHARACTERISTICS OF AN INSULATION FILM AND A PROTECTION FILM WHICH ARE DEPOSITED BY A LOWER-TEMPERATURE CHEMICAL VAPOR DEPOSITION METHOD

机译:薄膜晶体管基质,特别是用于改善通过低温化学气相沉积法沉积的绝缘膜和保护膜的刻蚀特性

摘要

PURPOSE: A thin film transistor substrate is provided to prevent the film characteristics of insulation and protection films from being lowered by adding a hydrogen gas to a deposition process.;CONSTITUTION: A gate line is formed on an insulating substrate(10), and a gate insulating layer(30) is formed on the gate line. A data line is formed on the gate insulation film, and a protection film(60) is formed on the data line. A contact hole(65) is formed by etching at least one of the gate insulation film and the protection film.;COPYRIGHT KIPO 2010
机译:目的:提供一种薄膜晶体管基板,以防止在沉积过程中添加氢气,从而降低绝缘膜和保护膜的膜特性。;组成:在绝缘基板上形成栅线(10),栅极绝缘层(30)形成在栅极线上。在栅极绝缘膜上形成数据线,并在数据线上形成保护膜(60)。通过蚀刻栅极绝缘膜和保护膜中的至少一个形成接触孔(65)。;COPYRIGHT KIPO 2010

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