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CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION FOR POLISHING A METAL WIRING, CAPABLE OF CONTROLLING THE GENERATION OF EROSION AND OBTAINING HIGH SPEED OF POLISHING TUNGSTEN, AND A POLISHING METHOD USING THE SAME
CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION FOR POLISHING A METAL WIRING, CAPABLE OF CONTROLLING THE GENERATION OF EROSION AND OBTAINING HIGH SPEED OF POLISHING TUNGSTEN, AND A POLISHING METHOD USING THE SAME
PURPOSE: A chemical mechanical polishing slurry composition is provided to have a high speed of polishing a metal wiring, to obtain a short polishing process time, and to be effectively used for the process of polishing the metal wiring by controlling the surface defects such as erosion.;CONSTITUTION: A chemical mechanical polishing slurry composition for polishing a metal wiring ultrapure water, an abrasive, an oxidizing agent, a metallic complex compound, and a polymer. The polymer is an acrylic acid-acrylamide copolymer having a copolymerization ratio of 1:30-30:1, respectively. The average molecular weight of the acrylic acid-acrylamide copolymer is 600,000-1,300,000. The acrylic acid-acrylamide copolymer is used with an amount of 0.001-0.1 weight% based on the total slurry composition.;COPYRIGHT KIPO 2010
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