CMP SLURRY COMPOSITION FOR POLISHING A METAL WIRING, CAPABLE OF OBTAINING A PROPER POLISHING SPEED SELECTIVITY RATIO TO THE METAL WIRING AND AN OXIDE FILM, AND A POLISHING METHOD USING THE SAME

摘要

PURPOSE: CMP slurry composition for polishing a metal wiring is provided to be used in a process of polishing the metal wiring due to a proper polishing speed selectivity ratio to the metal wiring and an oxide film.;CONSTITUTION: CMP slurry composition for polishing a metal wiring includes ultrapure water, an abrasive, an oxidizer, a metallic complex compound, and a pH adjusting agent. Colloid silica having a first particle diameter of 10-50 nm and ceria having a first diameter of 10-50 nm are used as the abrasive. The colloid silica and ceria are used in an amount of 0.01 - 3 weight% based on the CMP slurry composition. The weight ratio of the colloid silica and the ceria is 1:20 - 20:1, respectively.;COPYRIGHT KIPO 2010