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MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE HAVING THE THRESHOLD VOLTAGE ADJUSTING REGION CONTROLLING THE THRESHOLD VOLTAGE DECREASE OF THE MOS TRANSISTOR
MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE HAVING THE THRESHOLD VOLTAGE ADJUSTING REGION CONTROLLING THE THRESHOLD VOLTAGE DECREASE OF THE MOS TRANSISTOR
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机译:具有阈值电压调整区域以控制MOS晶体管的阈值电压减小的半导体器件的制造方法
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摘要
PURPOSE: The manufacturing method of the semiconductor device having the threshold voltage adjusting region forms the threshold voltage adjusting region at the lower part of the gate pattern.;CONSTITUTION: A semiconductor substrate(1) having the element isolation region(15s) limiting the first and second active areas of the different conductive type are prepared. The first mask pattern exposing the fixed region of the first and the second active area is formed. The first threshold voltage adjusting region(45) having the first active region and the other impurity concentration is formed in the fixed region of the first active region.;COPYRIGHT KIPO 2010
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