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SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WHICH IS FORMED BY USING A PRINTING METHOD, CAPABLE OF IMPROVING RELIABILITY, AND A MANUFACTURING METHOD THEREOF
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WHICH IS FORMED BY USING A PRINTING METHOD, CAPABLE OF IMPROVING RELIABILITY, AND A MANUFACTURING METHOD THEREOF
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机译:采用印刷方法,能够提高可靠性的半导体集成电路装置及其制造方法
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摘要
PURPOSE: A semiconductor integrated circuit device and a manufacturing method thereof are provided to form a source/drain region which is formed in both side walls of a nano semiconductor type material.;CONSTITUTION: A semiconductor integrated circuit device includes a gate(210), a gate insulating layer(220), a nano semiconductor type material(230), and a source/drain region(250). The gate is formed on a substrate. The gate insulating layer is formed on the gate. The nano semiconductor type material is formed in the partial region on the gate insulating layer. The source/drain region is formed on the side wall of the nano semiconductor type material and is separated with the nano semiconductor type material.;COPYRIGHT KIPO 2011
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