首页> 外国专利> SEMICONDUCTOR INTEGRATED CIRCUIT, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF THE SEMICONDUCTOR INTEGRATED CIRCUIT, CAPABLE OF FORMING ON A GLASS SUBSTRATE AND A FLEXIBLE SUBSTRATE

SEMICONDUCTOR INTEGRATED CIRCUIT, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF THE SEMICONDUCTOR INTEGRATED CIRCUIT, CAPABLE OF FORMING ON A GLASS SUBSTRATE AND A FLEXIBLE SUBSTRATE

机译:可在玻璃基板和柔性基板上形成的半导体集成电路,半导体装置以及半导体集成电路的制造方法

摘要

PURPOSE: A semiconductor integrated circuit, semiconductor device, and manufacturing method of the semiconductor integrated circuit are provided to reduce production costs by using a glass substrate instead of a silicon substrate. ;CONSTITUTION: In a semiconductor integrated circuit, semiconductor device, and manufacturing method of the semiconductor integrated circuit, an insulating substrate includes a connection terminal. A memory cell is formed on an insulating substrate and is connected to a wire including a cut portion which is obtained in laser cutting. An antenna(102) is connected to the connection terminal is formed on the semiconductor integrated circuit.;COPYRIGHT KIPO 2011
机译:目的:提供一种半导体集成电路,半导体器件以及该半导体集成电路的制造方法,以通过使用玻璃基板而不是硅基板来降低生产成本。组成:在半导体集成电路,半导体器件及其制造方法中,绝缘基板包括连接端子。存储单元形成在绝缘基板上,并且连接到包括通过激光切割获得的切割部分的导线。天线(102)连接到在半导体集成电路上形成的连接端子。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110081130A

    专利类型

  • 公开/公告日2011-07-13

    原文格式PDF

  • 申请/专利权人 SEMICONDUCTOR ENERGY LABORATORY CO. LTD.;

    申请/专利号KR20110059513

  • 发明设计人 KIYOSHI KATO;

    申请日2011-06-20

  • 分类号H01L21/82;H01L29/786;

  • 国家 KR

  • 入库时间 2022-08-21 17:51:28

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