Vapor phase growth apparatus and method of growing AlN epitaxial layer

摘要

PROBLEM TO BE SOLVED: To provide an AlN epitaxial growth method which can grow a high-quality AlN crystal on a sapphire substrate or a Si substrate at a high rate.;SOLUTION: HCl and H₂ are introduced through a first gas introduction port 12, and an Al metal reacts with HCl at 750°C or lower to form AlCl₃. NH₃ and H₂ are introduced through a second gas introduction port 14, and NH₃ and AlCl₃ are mixed in a mixing portion. The mixed gas is transferred to a substrate so that it reacts to form AlN. The temperature of the mixing portion is kept in a range of 80°C to 750°C in which AlCl₃ formed in a material reaction portion is not deposited in a quartz reaction chamber 18 and AlN is not deposited in the mixing portion. A substrate crystal 24 is kept at a temperature of 900°C to 1,700°C by high-frequency heating. This prevents AlN from being deposited before reaching the substrate crystal 24, thereby increasing the AlN epitaxial growth rate.;COPYRIGHT: (C)2005,JPO&NCIPI