Effects of Arsine Pressure on the Compositions, Carrier Concentrations, Mobilities and Growth Rates of Epitaxial Layers of Ga(x)In(1-x)As Prepared by the VPE (Vapor-Phase Epitaxy)-Hydride Technique

摘要

The effect of three arsine partial pressure on the preparation of the ternary, Ga(x)In(1-x)As, was investigated. Operational parameters are given for the preparation of Ga(0.47)In(0.53)As at these pressures. Increased arsine partial pressures decreased the gallium composition of the ternary. Growth rates have been determined as a function of gallium monochloride and arsine partial pressures. Increased mole fractions of arsine do not lower carrier concentrations or increase mobilities of the Ga(x)In(1-x)As layers. Keywords include: Vapor-Phase Epitaxy, Ga(x)In(1-x)As, and III-V Semiconductors.