Vapor deposition method of vapor-phase growth apparatus and the silicon epitaxial layer

摘要

PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus and a vapor phase growth method, for thin films such that a thin film continuously varying in impurity concentration along the thickness and a thin film greatly varying in impurity concentration along the thickness are easily formed by vapor phase growth.;SOLUTION: A resistivity distribution of a thin film along the thickness is controlled by introducing a material gas, obtained by a dilute impurity gas obtained by mixing at least an impurity gas and a dilute gas after controlling flow rates thereof by a first flow rate adjusting mechanism 12 and a second flow rate adjusting mechanism 14 respectively with a main gas having its flow rate controlled by a third flow rate adjusting mechanism 16 and then by a fourth flow rate adjusting mechanism 18, into a reaction chamber 22, and carrying out vapor phase growth while supplying the material gas to the reaction chamber 22 while continuously varying the flow rates of the gases flowing through the first, second, and third flow rate adjusting mechanisms simultaneously and continuously under arithmetic control so that the thin film has a desired resistivity profile along the thickness.;COPYRIGHT: (C)2010,JPO&INPIT