A vapor phase growth apparatus and a vapor phase growth method capable of growing a compound semiconductor layer having flatness and interface steepness at the atomic layer level with good productivity

摘要

Provided is a vapor phase growth apparatus and a vapor phase growth method capable of growing a compound semiconductor layer having flatness and interface steepness at the atomic layer level with good productivity. The growth chamber has a cylindrical portion and a single plate that closes the upstream side end portion of the cylindrical portion. The single plate is provided with a cation raw material gas supply port and an anion raw material gas supply port, while an exhaust device is provided on the downstream side of the cylindrical portion. A substrate holder having a substrate holding surface in a cylindrical portion is provided. The gas separating member separates the flow paths of the raw material gas from each other to form a plurality of raw material gas supply regions to which the raw material gas is supplied alone to the substrate holding surface. The driving device rotates the substrate holder on which the substrate is set on the substrate holding surface, around the center line of the cylindrical portion. Next, the cation raw material gas and the anion raw material gas are alternately supplied to the surface of the substrate.