VAPOR GROWTH APPARATUS AND VAPOR GROWTH METHOD CAPABLE OF GROWING A COMPOUND SEMICONDUCTOR LAYER HAVING AN EVENNESS AND AN INTERFACIAL SHARPNESS IN UNITS OF ATOMIC LAYERS WITH GOOD PRODUCTIVITY

摘要

Provided are a vapor phase growth apparatus and a vapor phase growth method capable of growing a compound semiconductor layer having flatness and interfacial steepness in atomic layer units with good productivity. The growth chamber has a cylindrical portion and a end plate for closing the upstream end of the cylindrical portion. A cation raw material gas supply port and an anion raw material gas supply port are provided on the end plate, while an exhaust device is provided downstream of the cylindrical portion. A substrate holder having a substrate holding surface is provided in the cylindrical portion. The gas separation member separates the flow paths of the raw material gas from each other to form a plurality of raw material gas supply regions to which the raw material gas is supplied alone to the substrate holding surface. The driving device rotates the substrate holder having the substrate set on the substrate holding surface around the centerline of the cylindrical portion. Then, the cation raw material gas and the anion raw material gas are alternately supplied to the surface of the substrate.