VAPOR GROWTH METHOD AND VAPOR GROWTH APPARATUS FOR PERFORMING FILM FORMATION OF SEMICONDUCTOR LAYER INCLUDING INGAN

摘要

PROBLEM TO BE SOLVED: To form a semiconductor including InGaN of high quality and a high In composition ratio in the formation of a semiconductor including InGaN.;SOLUTION: A vapor growth method for forming a semiconductor thin film including at least InGaN on a substrate using a vapor growth apparatus includes: a first step of reacting a first N source with an In source in the vapor growth apparatus to produce an InN source; a second step of reacting a second N source different from the first N source with a Ga source in the vapor growth apparatus to produce a GaN source; and a third step of reacting the InN source produced in the first step with the GaN source produced in the second step on the substrate to form a thin film on the substrate.;COPYRIGHT: (C)2013,JPO&INPIT