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Hydride Vapor Phase Epitaxial Growth of Thick GaN Layers with Improved Surface Flatness

机译：具有改善的表面平坦度的厚GaN层的氢化物气相外延生长

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1. Hydride vapor phase epitaxial growth of thick GaN layers with improved surface flatness [J] . Frank Habel, Peter Brueckner, Jenq-Dar Tsay, Physica Status Solidi. C, Conferences and critical reviews . 2005,第7期

机译：具有改善的表面平坦度的厚GaN层的氢化物气相外延生长
2. Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates [J] . Fujikura Hajime, Konno Taichiro, Yoshida Takehiro, Japanese journal of applied physics . 2017,第8期

机译：在独立式GaN衬底上具有光滑生长态的高纯度GaN层的氢化物气相外延生长
3. Hydride vapor phase epitaxial growth of thick GaN layers with in-situ optical monitoring [J] . J.F. Wang, X.J. Hu, Y.M. Zhang, Journal of Crystal Growth . 2009,第10期

机译：利用原位光学监测技术对厚GaN层进行氢化物气相外延生长
4. Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy [C] . Kazumasa Hiramatsu, Hidetada Matsushima, Takumi Shibata, Symposium L on nitrides and related wide band gap materials of the E-MRS conference . 1999

机译：金属有机气相外延和氢化物气相外延的选择性地区生长和外延横向过度生长
5. Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III-Nitride Growth [D] . Kawagy, Alaa 2019

机译：用于未来III-氮化物生长的氢化物气相外延生长GaN衬底的表征
6. Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method [O] . Jianming Liu, Xianlin Liu, Chengming Li, 2011

机译：氢化物与金属有机气相外延复合生长GaN薄膜的裂纹研究
7. Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template [O] . Gogova D., Kasic A., Larsson H., 2004

机译：在两步外延横向过长GaN模板上通过氢化物汽相外延生长无应变的块状GaN
8. Vapour Phase Growth of Thick Monocrystalline GaN Epitaxial Layers by Sandwich-Method [R] . Mokhov, E. N., Vodakov, Y. A., Roenkov, A. D., 1997

机译：用夹心法生长厚单晶GaN外延层的气相生长

Hydride Vapor Phase Epitaxial Growth of Thick GaN Layers with Improved Surface Flatness

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