INCREASING STABILITY OF A HIGH-K GATE DIELECTRIC OF A HIGH-K GATE STACK BY AN OXYGEN RICH TITANIUM NITRIDE CAP LAYER

摘要

In a replacement gate approach, the oxygen contents of a cap material may be increased, thereby providing more stable characteristics of the cap material itself and of the high-k dielectric material. Consequently, upon providing a work function adjusting metal species at a very advanced manufacturing stage, corresponding additional treatments may be reduced in number or may even be completely avoided, while at the same time threshold voltage variations may be reduced.