4-23 Radiation Effects Study of High-k HfO2 Gate Device

摘要

The gate dielectric thickness decreases dramatically with the continuous scaling of MOS devices,which has serious consequences on the leakage current and the power consumption of the SiO2-based MOS devices.Hafnium dioxide(HfO2),as a kind of high-k material,are recognized as alternatives to SiO2 for future advanced gate devices and space applications[1].Radiation-induced effects on conventional SiO2 dielectrics have been investigated.Now,an enormous amount of effort was required to adapt the new high-k systems for radiation hard application.